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Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 m N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 100 100 20 30 V V V V A A A A mJ J V/ns W C C C V~ Nm/lb g ISOPLUS247 (IXFR) E153432 G D S ISOLATED TAB D = Drain TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150 G = Gate S = Source Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Fast recovery intrinsic diode Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density 50/60 Hz, RMS, 1 minute Mounting Force 2500 20..120/4.6..20 5 Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150C TJ = 175C Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 250 1000 8 5.5 V V nA A A A m m RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99239(06/05) IXFR 200N10P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 135 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W 0.15 K/W ISOPLUS247 Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 200 400 1.5 100 0.4 6 A A V IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, dI/dt = 100 A/s VR = 100 V 140 ns C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXFR 200N10P Fig. 1. Output Characteristics @ 25C 200 175 150 VGS = 10V 9V 350 VGS = 10V 300 250 8V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 125 100 75 50 25 0 0 0.2 0.4 0.6 0.8 1 I D - Amperes 200 150 100 8V 7V 7V 6V 50 0 6V 1.2 1.4 1.6 0 0.5 1 1.5 V D S - Volts Fig. 3. Output Characteristics @ 150C 200 175 150 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V V D S - Volts 2 2.5 3 3.5 4 4.5 5 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 100A I D = 200A I D - Amperes 125 100 75 50 25 0 0 0.5 1 6V 7V 5V V D S - Volts 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 80 70 TJ = 175C 60 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . Drain Curre nt 2.4 2.2 R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 50 100 VGS = 15V I D - Amperes 50 40 30 20 10 VGS = 10V TJ = 25C 0 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175 I D - Amperes TC - Degrees Centigrade (c) 2005 IXYS All rights reserved IXFR 200N10P Fig. 7. Input Adm ittance 300 140 120 100 Fig. 8. Transconductance 250 g f s - Siemens I D - Amperes 200 TJ = -40C 80 60 40 20 0 25C 150C 150 TJ = -40C 25C 50 150C 100 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 50 100 150 200 250 300 350 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 350 300 250 10 9 8 7 VDS = 50V I D = 100A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 200 150 100 50 0 6 5 4 3 2 1 0 V S D - Volts 0 25 50 Q G - nanoCoulombs 75 100 125 150 175 200 225 250 Fig. 11. Capacitance 100,000 f = 1MHz 1000 100 0 Fig.. 12. Forw ard-Bias Fig 12. Fo r w ar d -Bias Safe Operating Area Safe Op e r atin g A r e a R DS(on) Limit R D S (o n ) Lim it C iss C oss TJ == 1 75 C T J 175C TT == 25 C 25C C C Capacitance - picoFarads 10,000 I DD - Amperes I - Amperes 100s 10 0s 100 1 00 1ms 1m s 10ms 10 m s DC 1,000 C rss 100 0 5 10 15 20 25 30 35 40 10 10 DC V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 1 10 10 V - Volts 100 VD S - V olts DS 100 1000 10 00 IXFR 200N10P Fig. 13. Maximum Transient Thermal Resistance 1.00 R( t h ) J C - C / W 0.10 0.01 0.00 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2005 IXYS All rights reserved |
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